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| 2SK1161, 2SK1162 Silicon N-Channel MOS FET Application TO-3P High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1 2 1 3 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1161 Symbol VDSS Ratings 450 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1162 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VGSS ID ID(pulse)* IDR Pch** Tch Tstg ------ 500 30 10 30 10 100 150 -55 to +150 V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1161, 2SK1162 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage 2SK1161 Symbol V(BR)DSS Min 450 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 -------------------------------------------------------------------------------------- -------- 2SK1162 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1161 V(BR)GSS IGSS IDSS ---- 500 30 -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- -- -- 10 250 A A -------------------------------------------------------------------------------------- -------- 2SK1162 Gate to source cutoff voltage Static Drain to source on state resistance 2SK1161 VGS(off) RDS(on) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4.0 -- -- -- -- -- -- -- -- -- 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 3.0 0.8 0.9 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 100 A/s ID = 5 A, VGS = 10 V, RL = 6 ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz V --------------------- VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------- 2SK1162 -------------------- -------------------------------------------------------------------------------------- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK1157, 2SK1158. -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 350 -- ns -------------------------------------------------------------------------------------- 2SK1161, 2SK1162 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) Maximum Safe Operation Area 10 s 0 O is per Lim at ite ion d in by th R is A DS re a ( 80 10 3 1.0 0.3 0.1 D PW 10 C = 1 s on ) O pe 10 m m s ra s tio (1 n 40 (T sh C ot = ) 25 C ) Ta = 25C 1 2SK1162 2SK1161 0 50 100 Case Temperature TC (C) 150 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM D = PW T 0.03 1S 0.01 10 ho ls t Pu e T 100 1m 10 m Pulse Width PW (s) 100 m PW 1 10 |
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